Experimental Comparison of RF Power LDMOSFETs on Thin-Film SOI and Bulk Silicon
نویسنده
چکیده
We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current–voltage ( – ), capacitance–voltage ( – ), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.
منابع مشابه
Improvement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering
In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...
متن کاملAnalog/RF Performance of NPN SiGe HBT on Thin Film SOI Over -55 to +125 degC Temperature Range
The research has been carried out to integrate MOSFETs and bipolar transistors on SOI substrate for high performance mixed signal applications [1]. Jin Cai, et al [2] analyzed npn SiGe HBT on SOI substrate. The characteristics of SiGe HBT on SOI over temperature range of 27 to 330 degC are reported in [3]. The performance of SiGe HBT on bulk is reported in extreme environment (-230 to 120 degC)...
متن کاملDeconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
متن کاملA numerical study of partial-SOI LDMOSFETs
The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...
متن کاملA Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates
The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...
متن کامل